화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching
Cerofolini GF, Giussani A, Modelli A, Mascolo D, Ruggiero D, Narducci D, Romano E
Applied Surface Science, 254(18), 5781, 2008
2 Schottky barrier formation at Cu/TiB2/TiSi2/Si interface
Pelleg J
Journal of Vacuum Science & Technology B, 18(3), 1338, 2000
3 Growth of (111)-oriented PbTe films on Si(001) using a BaF2 buffer
Belenchuk A, Fedorov A, Huhtinen H, Kantser V, Laiho R, Shapoval O, Zakhvalinskii V
Thin Solid Films, 358(1-2), 277, 2000
4 Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems
Liu ZJ, Zhang DW, Wang PF, Ding SJ, Zhang JY, Wang JT, Kohse-Hoinghaus K
Thin Solid Films, 368(2), 253, 2000
5 A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films
Zhang WJ, Sun C, Bello I, Lee CS, Lee ST
Journal of Chemical Physics, 110(9), 4616, 1999
6 A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
Ban I, Ozturk MC, Misra V, Wortman JJ, Venables D, Maher DM
Journal of the Electrochemical Society, 146(3), 1189, 1999
7 Heteroepitaxial growth of La0.7Ca0.3MnO3/SrTiO3/TiN/Si by pulsed laser deposition
Wong KH, Leung YS
Thin Solid Films, 354(1-2), 55, 1999
8 Anisotropic etching of silicon crystals in KOH solution - Part III - Experimental and theoretical shapes for 3D structures micro-machined in (hk0) plates
Tellier CR
Journal of Materials Science, 33(1), 117, 1998
9 What can electron paramagnetic resonance tell us about the Si/SiO2 system?
Lenahan PM, Conley JF
Journal of Vacuum Science & Technology B, 16(4), 2134, 1998
10 Oxide Thickness-Dependence and Bias-Dependence of Postmetallization Annealing of Interface States in Metal-Oxide-Silicon Diodes
Ragnarsson LA, Lundgren P, Ovuka Z, Andersson MO
Journal of the Electrochemical Society, 144(5), 1866, 1997