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Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching Cerofolini GF, Giussani A, Modelli A, Mascolo D, Ruggiero D, Narducci D, Romano E Applied Surface Science, 254(18), 5781, 2008 |
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Schottky barrier formation at Cu/TiB2/TiSi2/Si interface Pelleg J Journal of Vacuum Science & Technology B, 18(3), 1338, 2000 |
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Growth of (111)-oriented PbTe films on Si(001) using a BaF2 buffer Belenchuk A, Fedorov A, Huhtinen H, Kantser V, Laiho R, Shapoval O, Zakhvalinskii V Thin Solid Films, 358(1-2), 277, 2000 |
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Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems Liu ZJ, Zhang DW, Wang PF, Ding SJ, Zhang JY, Wang JT, Kohse-Hoinghaus K Thin Solid Films, 368(2), 253, 2000 |
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A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films Zhang WJ, Sun C, Bello I, Lee CS, Lee ST Journal of Chemical Physics, 110(9), 4616, 1999 |
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A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Ban I, Ozturk MC, Misra V, Wortman JJ, Venables D, Maher DM Journal of the Electrochemical Society, 146(3), 1189, 1999 |
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Heteroepitaxial growth of La0.7Ca0.3MnO3/SrTiO3/TiN/Si by pulsed laser deposition Wong KH, Leung YS Thin Solid Films, 354(1-2), 55, 1999 |
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Anisotropic etching of silicon crystals in KOH solution - Part III - Experimental and theoretical shapes for 3D structures micro-machined in (hk0) plates Tellier CR Journal of Materials Science, 33(1), 117, 1998 |
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What can electron paramagnetic resonance tell us about the Si/SiO2 system? Lenahan PM, Conley JF Journal of Vacuum Science & Technology B, 16(4), 2134, 1998 |
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Oxide Thickness-Dependence and Bias-Dependence of Postmetallization Annealing of Interface States in Metal-Oxide-Silicon Diodes Ragnarsson LA, Lundgren P, Ovuka Z, Andersson MO Journal of the Electrochemical Society, 144(5), 1866, 1997 |