화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices
Meng LK, Hong PZ, He XB, Li CL, Li JJ, Li JF, Zhao C, Wei YY, Yan J
Applied Surface Science, 362, 483, 2016
2 Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs
Qin CL, Wang GL, Kolahdouz M, Luo J, Yin HX, Yang P, Li JF, Zhu HL, Chao Z, Ye TC, Radamson HH
Solid-State Electronics, 124, 10, 2016