화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy
Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C
Journal of Crystal Growth, 459, 129, 2017
2 Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
Journal of Crystal Growth, 463, 86, 2017
3 Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
Radhakrishnan K, Yuan K, Hong W
Journal of Crystal Growth, 261(1), 16, 2004
4 Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE
Johnson MC, Jorgenson RJ, Wu J, Shan W, Bourret-Courchesne E
Journal of Crystal Growth, 261(1), 44, 2004
5 Spiral growth mechanisms of CMTD crystals
Wang KP, Sun DL, Zhang JX, Yu WT, Liu H, Hu XB, Guo SY, Geng YL
Journal of Crystal Growth, 261(1), 63, 2004