검색결과 : 5건
No. | Article |
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1 |
Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C Journal of Crystal Growth, 459, 129, 2017 |
2 |
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B Islam ME, Akabori M Journal of Crystal Growth, 463, 86, 2017 |
3 |
Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy Radhakrishnan K, Yuan K, Hong W Journal of Crystal Growth, 261(1), 16, 2004 |
4 |
Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE Johnson MC, Jorgenson RJ, Wu J, Shan W, Bourret-Courchesne E Journal of Crystal Growth, 261(1), 44, 2004 |
5 |
Spiral growth mechanisms of CMTD crystals Wang KP, Sun DL, Zhang JX, Yu WT, Liu H, Hu XB, Guo SY, Geng YL Journal of Crystal Growth, 261(1), 63, 2004 |