화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Growth direction control of InAs nanowires on (001) Si substrate with SiO2/Si nano-trench
Chen WC, Chen LH, Lin YT, Lin HH
Journal of Crystal Growth, 463, 27, 2017
2 Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
Journal of Crystal Growth, 463, 86, 2017
3 Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films
Ohgaki T, Sakaguchi I, Ohashi N, Haneda H
Journal of Crystal Growth, 476, 12, 2017
4 AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range
Tamariz S, Martin D, Grandjean N
Journal of Crystal Growth, 476, 58, 2017
5 Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films
Schuffelgen P, Rosenbach D, Neumann E, Stehno MP, Lanius M, Zhao JL, Wang M, Sheehan B, Schmidt M, Gao B, Brinkman A, Mussler G, Schapers T, Grutzmacher D
Journal of Crystal Growth, 477, 183, 2017
6 Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation
Kato M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K
Journal of Crystal Growth, 477, 197, 2017
7 Strain and anisotropy effects studied in InAs/GaAs(221) quantum dashes by Raman spectroscopy
Espinosa-Vega LI, Eugenio-Lopez E, Gutierrez-Hernandez JM, Gorbatchev AY, Shimomura S, Mendez-Garcia VH
Journal of Crystal Growth, 477, 212, 2017
8 Real structure of lattice matched GaAs-Fe3Si core-shell nanowires
Jenichen B, Hilse M, Herfort J, Trampert A
Journal of Crystal Growth, 410, 1, 2015
9 Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry
Tellekamp MB, Greenlee JD, Shank JC, Doolittle WA
Journal of Crystal Growth, 425, 225, 2015
10 Physical properties of InGaO3(ZnO)(m) with various content ratio grown by PAMBE
Yang CS, Huang SJ, Kao YC, Chen GH, Chou WC
Journal of Crystal Growth, 425, 258, 2015