| 1 |
Quality-enhanced AIN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications
Fu SL, Li Q, Gao S, Wang GY, Zeng F, Pan F
Applied Surface Science, 402, 392, 2017 |
| 2 |
Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AIN on sapphire substrate
Wang HB, Sodabanlu H, Daigo Y, Seino T, Nakagawa T, Sugiyama M
Journal of Crystal Growth, 465, 12, 2017 |
| 3 |
Novel HDPE nanocomposites containing aluminum nitride (nano) particles: Micro-structural and nano-mechanical properties correlation
Rajeshwari P, Dey TK
Materials Chemistry and Physics, 190, 175, 2017 |
| 4 |
Optimization of energy and fluence of N-2(+) ions in the conversion of Al2O3 surface into AIN at room temperature
Kumar P, Devi P, Kumar M, Shivaprasad SM
Applied Surface Science, 361, 265, 2016 |
| 5 |
Atmospheric-pressure-plasma-jet sintered nanoporous AlN/CNT composites
Chiu YF, Yeh PW, Cheng IC, Chen JZ
Applied Surface Science, 377, 75, 2016 |
| 6 |
Investigation of AlN thin film growth on MgO(111) substrates using low temperature helicon sputtering system
Hsu WF, Kao HL, Lin ZP
Journal of Crystal Growth, 436, 46, 2016 |
| 7 |
AlN thin film grown on different substrates by hydride vapor phase epitaxy
Sun MS, Zhang JC, Huang J, Wang JF, Xu K
Journal of Crystal Growth, 436, 62, 2016 |
| 8 |
Single phase (11(2)over-bar2) AIN grown on (10(1)over-bar0) sapphire by metalorganic vapour phase epitaxy
Dinh DV, Conroy M, Zubialevich VZ, Petkov N, Holmes JD, Parbrook PJ
Journal of Crystal Growth, 414, 94, 2015 |
| 9 |
Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue (R) MOCVD platform
Bao QL, Zhu TK, Zhou N, Guo SP, Luo J, Zhao C
Journal of Crystal Growth, 419, 52, 2015 |
| 10 |
Low temperature AIN growth by MBE and its application in HEMTs
Faria FA, Nomoto K, Hu ZY, Rouvimov S, Xing HL, Jena D
Journal of Crystal Growth, 425, 133, 2015 |
