검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Thermal stability of N-polar n-type Ohmic contact for GaN-based light emitting diode on Si substrate Liu JL, Feng FF, Zhang JL, Jiang L, Jiang FY Thin Solid Films, 520(6), 2155, 2012 |
| 2 |
Residual stress in GaN films grown by metalorganic chemical vapor deposition Chen Y, Gulino DA, Higgins R Journal of Vacuum Science & Technology A, 17(5), 3029, 1999 |
| 3 |
Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates Kozawa T, Kachi T, Ohwaki T, Taga Y, Koide N, Koike M Journal of the Electrochemical Society, 143(1), L17, 1996 |
| 4 |
High-Quality P-Type GaN Deposition on C-Sapphire Substrates in a Multiwafer Rotating-Disk Reactor Yuan C, Salagaj T, Gurary A, Zawadzki P, Chern CS, Kroll W, Stall RA, Li Y, Schurman M, Hwang CY, Mayo WE, Lu Y, Pearton SJ, Krishnankutty S, Kolbas RM Journal of the Electrochemical Society, 142(9), L163, 1995 |
| 5 |
Investigation of N-Type and P-Type Doping of GaN During Epitaxial-Growth in a Mass-Production Scale Multiwafer-Rotating-Disk Reactor Yuan C, Salagaj T, Gurary A, Thompson AG, Kroll W, Stall RA, Hwang CY, Schurman M, Li Y, Mayo WE, Lu Y, Krishnankutty S, Shmagin IK, Kolbas RM, Pearton SJ Journal of Vacuum Science & Technology B, 13(5), 2075, 1995 |
| 6 |
Widegap Column-III Nitride Semiconductors for UV/Blue Light-Emitting Devices Akasaki I, Amano H Journal of the Electrochemical Society, 141(8), 2266, 1994 |