화학공학소재연구정보센터
검색결과 : 350건
No. Article
1 Two-Facing-Targets (TFT) 스퍼터링장치를 이용하여 증착한 AlN박막의 잔류응력 측정
한창석, 권용준
Korean Journal of Materials Research, 31(12), 697, 2021
2 Consolidation behaviour of Cu/AlN composites by pulse electric current sintering of copper-coated aluminium nitride precursors
Ramirez-Vinasco D, Leon-Patino CA, Nanko M, Aguilar-Reyes EA
Powder Technology, 377, 723, 2021
3 Ultrafine AlN synthesis by alumina carbothermal reduction under vacuum: Mechanism and experimental study
Xu YL, Zhou ZQ, Chen XM, Han CC, Yang B, Xu BQ, Liu DC
Powder Technology, 377, 843, 2021
4 High-performance mesoporous (AlN/Al2O3) for enhanced NH3 yield during chemical looping ammonia generation technology
Zhang Q, Wu Y, Gao Y, Chen XP, Liu D, Fan MH
International Journal of Hydrogen Energy, 45(16), 9903, 2020
5 Influence of crystal anisotropy on deformation behaviors in nanoscratching of AlN
Li BZ, Li JY, Zhu PZ, Xu JH, Li R, Yu JX
Applied Surface Science, 487, 1068, 2019
6 A study on Ga-Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Zheng Y, Agrawal M, Dharmarasu N, Radhakrishnan K, Patwal S
Applied Surface Science, 481, 319, 2019
7 Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer
Ke WC, Liang ZY, Tesfay ST, Chiang CY, Yang CY, Chang KJ, Lin JC
Applied Surface Science, 494, 644, 2019
8 Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth
Seta Y, Akiyama T, Pradipto AM, Nakamura K, Ito T
Journal of Crystal Growth, 510, 7, 2019
9 Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer
Kanyandekwe J, Baines Y, Richy J, Favier S, Leroux C, Blachier D, Mazel Y, Veillerot M, Barnes JP, Mrad M, Wiese C, Charles M
Journal of Crystal Growth, 515, 48, 2019
10 Direct observation of Eu atoms in AlN lattice and the first-principles simulations
Yin LJ, Zhang SH, Wang H, Jian X, Wang X, Xu X, Liu MZ, Fang CM
Journal of the American Ceramic Society, 102(1), 310, 2019