검색결과 : 34건
No. | Article |
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1 |
Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells Chevuntulak C, Rakpaises T, Sridumrongsak N, Thainoi S, Kiravittaya S, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Tandaechanurat A, Panyakeow S Journal of Crystal Growth, 512, 159, 2019 |
2 |
Growth and temperature dependent photoluminescence of InGaAs quantum dot chains Yang H, Kim DJ, Colton JS, Park T, Meyer D, Jones AM, Thalman S, Smith D, Clark K, Brown S Applied Surface Science, 296, 8, 2014 |
3 |
Microdisk enhanced photodetector based on Ge self-assembled quantum dots on silicon-on-insulator Xu XJ, Chiba T, Maruizumi T, Shiraki Y Thin Solid Films, 557, 363, 2014 |
4 |
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J Journal of Crystal Growth, 363, 282, 2013 |
5 |
Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature Xu XJ, Usami N, Maruizumi T, Shiraki Y Journal of Crystal Growth, 378, 636, 2013 |
6 |
The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys Han SS, Panyakeow S, Ratanathammaphan S, Higo A, Wang YP, Deura M, Sugiyama M, Nakano Y Canadian Journal of Chemical Engineering, 90(4), 915, 2012 |
7 |
MBE growth of In(Ga)As quantum dots for entangled light emission Nicoll CA, Salter CL, Stevenson RM, Hudson AJ, Atkinson P, Cooper K, Shields AJ, Ritchie DA Journal of Crystal Growth, 311(7), 1811, 2009 |
8 |
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition Liang S, Zhu HL, Ye XL, Wang W Journal of Crystal Growth, 311(8), 2281, 2009 |
9 |
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties Liang S, Zhu HL, Pan JQ, Ye XL, Wang W Journal of Crystal Growth, 289(2), 477, 2006 |
10 |
Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots Lee SW, Chen PS, Chien TY, Chen LJ, Chia CT, Liu CW Thin Solid Films, 508(1-2), 120, 2006 |