화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Experimental and theoretical study of ion distributions near 300 mu m tall steps on rf-biased wafers in high density plasmas
Woodworth JR, Miller PA, Shul RJ, Abraham IC, Aragon BP, Hamilton TW, Willison CG, Kim D, Economou DJ
Journal of Vacuum Science & Technology A, 21(1), 147, 2003
2 Electrical and plasma property measurements of a deep reactive ion etching Bosch process
Abraham IC, Woodworth JR, Riley ME, Miller PA, Shul RJ, Willison CG
Journal of Vacuum Science & Technology B, 21(3), 1112, 2003
3 Ion energy distributions at rf-biased wafer surfaces
Woodworth JR, Abraham IC, Riley ME, Miller PA, Hamilton TW, Aragon BP, Shul RJ, Willison CG
Journal of Vacuum Science & Technology A, 20(3), 873, 2002
4 Ion energy distributions versus frequency and ion mass at the rf-biased electrode in an inductively driven discharge
Abraham IC, Woodworth JR, Riley ME, Miller PA, Hamilton TW, Aragon BP
Journal of Vacuum Science & Technology A, 20(5), 1759, 2002
5 SiO2 to Si Selectivity Mechanisms in High-Density Fluorocarbon Plasma-Etching
Kirmse KH, Wendt AE, Disch SB, Wu JZ, Abraham IC, Meyer JA, Breun RA, Woods RC
Journal of Vacuum Science & Technology B, 14(2), 710, 1996