화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
Journal of Crystal Growth, 248, 139, 2003
2 MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications
Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M
Journal of Crystal Growth, 248, 153, 2003
3 InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
Velling P, Agethen M, Prost W, Tegude FJ
Journal of Crystal Growth, 221, 722, 2000