| 1 |
Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy
Edon V, Hugon MC, Agius B, Durand O, Eypert C, Cardinaud C
Thin Solid Films, 516(22), 7974, 2008 |
| 2 |
Thermally induced atomic transport in nanometric LaAlON films on Si
Bastos KP, Salvador L, Krug C, Edon V, Hugon MC, Agius B, Baumvol IJR
Electrochemical and Solid State Letters, 10(10), G69, 2007 |
| 3 |
Structural and electrical properties of the interfacial layer in sputter deposited LaAlO3/Si thin films
Edon V, Hugon MC, Agius B, Cohen C, Cardinaud C, Eypert C
Thin Solid Films, 515(20-21), 7782, 2007 |
| 4 |
Atomic transport in LaAlO3 films on Si induced by thermal annealing
Miotti L, Driemeier C, Tatsch F, Radtke C, Edon V, Hugon MC, Voldoire O, Agius B, Baumvol IJR
Electrochemical and Solid State Letters, 9(6), F49, 2006 |
| 5 |
TaSiN diffusion barriers deposited by reactive magnetron sputtering
Letendu F, Hugon MC, Agius B, Vickridge I, Berthier C, Lameille JM
Thin Solid Films, 513(1-2), 118, 2006 |
| 6 |
High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties
Hugon MC, Delmotte F, Agius B, Irene EA
Journal of Vacuum Science & Technology B, 17(4), 1430, 1999 |
| 7 |
Growth and characterization of radio-frequency magnetron sputtered lead zirconate titanate thin films deposited on < 111 > Pt electrodes
Ea-Kim B, Aubert P, Ayguavives F, Bisaro R, Varniere F, Olivier J, Puech M, Agius B
Journal of Vacuum Science & Technology A, 16(5), 2876, 1998 |
| 8 |
Electrical-Properties of Metal-Insulator-Semiconductor Structures with Silicon-Nitride Dielectrics Deposited by Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposition Distributed Electron-Cyclotron-Resonance
Hugon MC, Delmotte F, Agius B, Courant JL
Journal of Vacuum Science & Technology A, 15(6), 3143, 1997 |
| 9 |
Low temperature deposition of SiNx : H using SiH4-N-2 or SiH4-NH3 distributed electron cyclotron resonance microwave plasma
Delmotte F, Hugon MC, Agius B, Courant JL
Journal of Vacuum Science & Technology B, 15(6), 1919, 1997 |
| 10 |
Electrical-Properties of Silicon-Nitride Films Grown on a SiGe Layer by Distributed Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition
Dufourgergam E, Meyer F, Delmotte F, Hugon MC, Agius B, Warren P, Dutartre D
Thin Solid Films, 294(1-2), 214, 1997 |
