검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Nanopyramid-based absorber to boost the efficiency of InGaN solar cells El Huni W, Karrakchou S, Halfaya Y, Arif M, Jordan MB, Puybaret R, Ayari T, Ennakrachi H, Bishop C, Gautier S, Ahaitouf A, Voss PL, Salvestrini JP, Ougazzaden A Solar Energy, 190, 93, 2019 |
| 2 |
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Pantzas K, El Gmili Y, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss PL, Ougazzaden A Journal of Crystal Growth, 370, 57, 2013 |
| 3 |
Interface state effects in GaN Schottky diodes Ahaitouf A, Srour H, Hamady SOS, Fressengeas N, Ougazzaden A, Salvestrini JP Thin Solid Films, 522, 345, 2012 |
| 4 |
On the determination of interface state density in n-InP Schottky structures by current-voltage measurements - Comparison with DLTS results Ahaitouf A, Losson E, Bath A Solid-State Electronics, 44(3), 515, 2000 |
| 5 |
Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures Ahaitouf A, Bath A Thin Solid Films, 342(1-2), 136, 1999 |