검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 82, 29, 2013 |
| 2 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 84, 53, 2013 |
| 3 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 68, 68, 2012 |
| 4 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs Kawanago T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 74, 2, 2012 |
| 5 |
Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure Sato S, Kakushima K, Ahmet P, Ohmori K, Natori K, Yamada K, Iwai H Solid-State Electronics, 65-66, 2, 2011 |
| 6 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 715, 2010 |
| 7 |
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric Kakushima K, Koyanagi T, Tachi K, Song J, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 720, 2010 |
| 8 |
Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration Sato S, Kamimura H, Arai H, Kakushima K, Ahmet P, Ohmori K, Yamada K, Iwai H Solid-State Electronics, 54(9), 925, 2010 |
| 9 |
Pliant Epitaxial Ionic Oxides on Silicon Kukuruznyak D, Reichert H, Ohmori K, Ahmet P, Chikyow T Advanced Materials, 20(20), 3827, 2008 |
| 10 |
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS Kakushima K, Okamoto K, Adachi M, Tachi K, Song J, Sato S, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Applied Surface Science, 254(19), 6106, 2008 |