검색결과 : 18건
No. | Article |
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1 |
State-of-the-art review of interface bond testing devices for pavement layers: toward the standardization procedure Rahman A, Ai CF, Xin CF, Gao XW, Lu Y Journal of Adhesion Science and Technology, 31(2), 109, 2017 |
2 |
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment Chang KC, Chen JH, Tsai TM, Chang TC, Huang SY, Zhang R, Chen KH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Liao KH, Tai YH, Young TF, Sze SM, Ai CF, Wang MC, Huang JW Journal of Supercritical Fluids, 85, 183, 2014 |
3 |
Improvement of n(+)-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal Wang MC, Chang TC, Tsao S, Chen YZ, Hsu TC, Jan DJ, Ai CF, Chen JR Solid-State Electronics, 72, 12, 2012 |
4 |
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF Solid-State Electronics, 77, 31, 2012 |
5 |
Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack Li CC, Chang-Liao KS, Fu CH, Tzeng TH, Lu CC, Hong HZ, Chen TC, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 78, 17, 2012 |
6 |
Edge Passivation of Si Solar Cells by Omnidirectional Hydrogen Plasma Implantation Chen YY, Chen JY, Hsu RJ, Ho WS, Liu CW, Tsai WF, Ai CF Journal of the Electrochemical Society, 158(9), H912, 2011 |
7 |
n(+)-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal Wang MC, Chang TC, Tsao SW, Chen YZ, Tseng SC, Hsu TC, Jan DJ, Ai CF, Chen JR Solid-State Electronics, 57(1), 73, 2011 |
8 |
Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface Ho WS, Deng Y, Chen YY, Cheng TH, Liu CW, Tsai WF, Ai CF Thin Solid Films, 520(1), 448, 2011 |
9 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 54(10), 1094, 2010 |
10 |
Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction Wang JC, Lin CT, Lai CS, Hsu JL, Ai CF Solid-State Electronics, 54(12), 1493, 2010 |