화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 State-of-the-art review of interface bond testing devices for pavement layers: toward the standardization procedure
Rahman A, Ai CF, Xin CF, Gao XW, Lu Y
Journal of Adhesion Science and Technology, 31(2), 109, 2017
2 Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
Chang KC, Chen JH, Tsai TM, Chang TC, Huang SY, Zhang R, Chen KH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Liao KH, Tai YH, Young TF, Sze SM, Ai CF, Wang MC, Huang JW
Journal of Supercritical Fluids, 85, 183, 2014
3 Improvement of n(+)-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal
Wang MC, Chang TC, Tsao S, Chen YZ, Hsu TC, Jan DJ, Ai CF, Chen JR
Solid-State Electronics, 72, 12, 2012
4 Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory
Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF
Solid-State Electronics, 77, 31, 2012
5 Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack
Li CC, Chang-Liao KS, Fu CH, Tzeng TH, Lu CC, Hong HZ, Chen TC, Wang TK, Tsai WF, Ai CF
Solid-State Electronics, 78, 17, 2012
6 Edge Passivation of Si Solar Cells by Omnidirectional Hydrogen Plasma Implantation
Chen YY, Chen JY, Hsu RJ, Ho WS, Liu CW, Tsai WF, Ai CF
Journal of the Electrochemical Society, 158(9), H912, 2011
7 n(+)-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal
Wang MC, Chang TC, Tsao SW, Chen YZ, Tseng SC, Hsu TC, Jan DJ, Ai CF, Chen JR
Solid-State Electronics, 57(1), 73, 2011
8 Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface
Ho WS, Deng Y, Chen YY, Cheng TH, Liu CW, Tsai WF, Ai CF
Thin Solid Films, 520(1), 448, 2011
9 Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation
Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF
Solid-State Electronics, 54(10), 1094, 2010
10 Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction
Wang JC, Lin CT, Lai CS, Hsu JL, Ai CF
Solid-State Electronics, 54(12), 1493, 2010