검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Investigation of heavily nitrogen-doped n(+) 4H-SiC crystals grown by physical vapor transport Ohtani N, Katsuno M, Nakabayashi M, Fujimoto T, Tsuge H, Yashiro H, Aigo T, Hirano H, Hoshino T, Tatsumi K Journal of Crystal Growth, 311(6), 1475, 2009 |
| 2 |
Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals Ohtani N, Katsuno M, Tsuge H, Fujimoto T, Nakabayashi M, Yashiro H, Sawamura M, Aigo T, Hoshino T Journal of Crystal Growth, 286(1), 55, 2006 |
| 3 |
Growth of large high-quality SiC single crystals Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H Journal of Crystal Growth, 237, 1180, 2002 |
| 4 |
Growth and defect reduction of bulk SiC crystals Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H Materials Science Forum, 389-3, 29, 2002 |
| 5 |
4H polytype grain formation in PVT-grown 6H-SiC ingots Fujimoto T, Katsuno M, Ohtani N, Aigo T, Yashiro H Materials Science Forum, 389-3, 47, 2002 |
| 6 |
Evolution of crystal mosaicity during physical vapor transport growth of SiC Katsuno M, Ohtani N, Fujimoto T, Aigo T, Yashiro H Materials Science Forum, 389-3, 55, 2002 |
| 7 |
Micropipe formation model via surface step interaction Ohtani N, Katsuno M, Fujimoto T, Aigo T, Yashiro H Materials Science Forum, 389-3, 99, 2002 |
| 8 |
Surface step model for micropipe formation in SiC Ohtani N, Katsuno M, Fujimoto T, Aigo T, Yashiro H Journal of Crystal Growth, 226(2-3), 254, 2001 |
| 9 |
Step bunching behaviour on the {0001} surface of hexagonal SiC Ohtani N, Katsuno M, Aigo T, Fujimoto T, Tsuge H, Yashiro H, Kanaya M Journal of Crystal Growth, 210(4), 613, 2000 |
| 10 |
Structural properties of subgrain boundaries in bulk SiC crystals Katsuno M, Ohtani N, Aigo T, Fujimoto T, Tsuge H, Yashiro H, Kanaya M Journal of Crystal Growth, 216(1-4), 256, 2000 |