검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric Lee DJ, Lim JW, Mun JK, Yun SJ Materials Research Bulletin, 83, 597, 2016 |
| 2 |
Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG Materials Science Forum, 457-460, 1369, 2004 |