| 1 |
Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
Tsai JH, Niu JS
International Journal of Hydrogen Energy, 44(3), 2053, 2019 |
| 2 |
Effect of substrate off-orientation on the characteristics of GaInP/AlGaInP single heterojunction solar cells
Kim JH, Shin HB
Korean Journal of Chemical Engineering, 36(2), 305, 2019 |
| 3 |
Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells
Ochoa-Martinez E, Barrutia L, Ochoa M, Barrigon E, Garcia I, Rey-Stolle I, Algora C, Basa P, Kronome G, Gabas M
Solar Energy Materials and Solar Cells, 174, 388, 2018 |
| 4 |
Combined Mg/Zn p-type doping for AlGaInP laser diodes
Pohl J, Bugge F, Blume G, Knigge A, Knigge S, Erbert G, Weyers M
Journal of Crystal Growth, 414, 215, 2015 |
| 5 |
Comparison of AlGaInP-VECSEL gain structures
Baumgartner S, Kahle H, Bek R, Schwarzback T, Jetter M, Michler P
Journal of Crystal Growth, 414, 219, 2015 |
| 6 |
Research on efficiency droop mechanism and improvement in AlGaInP Ultra-High-Brightness LEDs using the transient measurement method
Huang CF, Su YF, Lin CB, Chiang KN
Solid-State Electronics, 93, 15, 2014 |
| 7 |
SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction method
Shei SC, Zeng XF, Lin NM, Chang SJ
Thin Solid Films, 570, 230, 2014 |
| 8 |
Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process
Lee HJ, Kim SU, So SJ, Cho YD, Kim YJ, Ahn SC, Lee CH
Current Applied Physics, 13(6), 1032, 2013 |
| 9 |
Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs
Schwarzback T, Kahle H, Jetter M, Michler P
Journal of Crystal Growth, 370, 208, 2013 |
| 10 |
High-efficiency vertical AlGaInP light-emitting diodes with conductive omni-directional reflectors
Seo JW, Oh HS, Kwak JS
Current Applied Physics, 11(3), S385, 2011 |
