| 1 |
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
Kim JG, Kang SH, Janicki L, Lee JH, Ju JM, Kim KW, Lee YS, Lee SH, Lim JW, Kwon HS, Lee JH
Solid-State Electronics, 152, 24, 2019 |
| 2 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
Chen DB, Wan LJ, Li J, Liu ZK, Li GQ
Solid-State Electronics, 151, 60, 2019 |
| 3 |
Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition
Wang L, Li LA, Zhang T, Liu XK, Ao JP
Applied Surface Science, 427, 1199, 2018 |
| 4 |
Theoretical study of the influence of surface effects on GaN-based chemical sensors
Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B
Applied Surface Science, 452, 75, 2018 |
| 5 |
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Zhang T, Wang L, Li XB, Bu YY, Pu TF, Wang RL, Li LA, Ao JP
Applied Surface Science, 462, 799, 2018 |
| 6 |
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Osvald J, Lalinsky T, Vanko G
Applied Surface Science, 461, 206, 2018 |
| 7 |
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas R, Gregusova D, Hasenohrl S, Brytavskyi E, Tapajna M, Frohlich K, Hascik S, Gregor M, Kuzmik J
Applied Surface Science, 461, 255, 2018 |
| 8 |
Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE
Hentschel R, Gartner J, Wachowiak A, Grosser A, Mikolajick T, Schmult S
Journal of Crystal Growth, 500, 1, 2018 |
| 9 |
Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N-2 plasma surface treatment
Liu H, Zhang ZJ, Luo WJ
Solid-State Electronics, 144, 60, 2018 |
| 10 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK
Solid-State Electronics, 142, 8, 2018 |
