| 1 |
Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N-2 plasma surface treatment
Liu H, Zhang ZJ, Luo WJ
Solid-State Electronics, 144, 60, 2018 |
| 2 |
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
Zhou XY, Feng ZH, Wang L, Wang YG, Lv YJ, Dun SB, Cai SJ
Solid-State Electronics, 100, 15, 2014 |
| 3 |
Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance
Manoi A, Pomeroy JW, Lossy R, Pazirandeh R, Wurfl J, Uren MJ, Martin T, Kuball M
Solid-State Electronics, 57(1), 14, 2011 |
| 4 |
An analytical model for current-voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect
Cheng XX, Li M, Wang Y
Solid-State Electronics, 54(1), 42, 2010 |
| 5 |
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY
Solid-State Electronics, 52(5), 632, 2008 |
| 6 |
AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
Wang HT, Tan LS, Chor EF
Thin Solid Films, 515(10), 4476, 2007 |
| 7 |
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
Arulkumaran S, Liu ZH, Ng GI, Cheong WC, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan CL
Thin Solid Films, 515(10), 4517, 2007 |
| 8 |
Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
Arulkumaran S, Egawa T, Ishikawa H
Solid-State Electronics, 49(10), 1632, 2005 |
| 9 |
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
Luo B, Johnson JW, Gila BP, Onstine A, Abernathy CR, Ren F, Pearton SJ, Baca AG, Dabiran AM, Wowchack AM, Chow PP
Solid-State Electronics, 46(4), 467, 2002 |
| 10 |
An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs
Rashmi, Kranti A, Haldar S, Gupta RS
Solid-State Electronics, 46(5), 621, 2002 |
