검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate Zhang ZL, Song L, Li WY, Fu K, Yu GH, Zhang XD, Fan YM, Deng XG, Li SM, Sun SC, Li XJ, Yuan J, Sun Q, Dong ZH, Cai Y, Zhang BS Solid-State Electronics, 134, 39, 2017 |
| 2 |
The causes of GaN HEMT bell-shaped transconductance degradation Chen CH, Sadler R, Wang DV, Hou D, Yang YF, Yau W, Sutton W, Shim J, Wang SG, Duong A Solid-State Electronics, 126, 115, 2016 |
| 3 |
Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (111) substrates Cho SJ, Wang C, Kim NY Solid-State Electronics, 89, 85, 2013 |