검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band Mickevicius J, Dobrovolskas D, Aleksiejunas R, Nomeika K, Grinys T, Kadys A, Tamulaitis G Journal of Crystal Growth, 459, 173, 2017 |
| 2 |
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R Current Applied Physics, 16(6), 633, 2016 |
| 3 |
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN Malinauskas T, Aleksiejunas R, Jarasiunas K, Beaumont B, Gibart P, Kakanakova-Georgieva A, Janzen E, Gogova D, Monemar B, Heuken M Journal of Crystal Growth, 300(1), 223, 2007 |
| 4 |
Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals Storasta L, Aleksiejunas R, Sudzius M, Kadys A, Malinauskas T, Jarasiunas K, Magnusson B, Janzen E Materials Science Forum, 483, 409, 2005 |
| 5 |
Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers Neimontas K, Aleksiejunas R, Sudzius M, Jarasiunas K, Bergman JP Materials Science Forum, 483, 413, 2005 |