검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
MBE growth and doping of AlGaP Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C Journal of Crystal Growth, 466, 6, 2017 |
| 2 |
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells Almosni S, Rale P, Cornet C, Perrin M, Lombez L, Letoublon A, Tavernier K, Levallois C, Rohel T, Bertru N, Guillemoles JF, Durand O Solar Energy Materials and Solar Cells, 147, 53, 2016 |
| 3 |
Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells Ilahi S, Almosni S, Chouchane F, Perrin M, Zelazna K, Yacoubi N, Kudrawiec R, Rale P, Lombez L, Guillemoles JF, Durand O, Cornet C Solar Energy Materials and Solar Cells, 141, 291, 2015 |
| 4 |
Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 377, 17, 2013 |
| 5 |
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 380, 157, 2013 |
| 6 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A Thin Solid Films, 541, 36, 2013 |