| 1 |
Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity
Zhuravlev AG, Khoroshilov VS, Alperovich VL
Applied Surface Science, 483, 895, 2019 |
| 2 |
Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers
Zhuravlev AG, Alperovich VL
Applied Surface Science, 461, 10, 2018 |
| 3 |
Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers
Zhuravlev AG, Alperovich VL
Applied Surface Science, 395, 3, 2017 |
| 4 |
Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing
Akhundov IO, Kazantsev DM, Alperovich VL, Sheglov DV, Kozhukhov AS, Latyshev AV
Applied Surface Science, 406, 307, 2017 |
| 5 |
Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions
Kazantsev DM, Akhundov IO, Karpov AN, Shwartz NL, Alperovich VL, Terekhov AS, Latyshev AV
Applied Surface Science, 333, 141, 2015 |
| 6 |
Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation
Kazantsev DM, Akhundov IO, Shwartz NL, Alperovich VL, Latyshev AV
Applied Surface Science, 359, 372, 2015 |
| 7 |
Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions
Akhundov IO, Alperovich VL, Latyshev AV, Terekhov AS
Applied Surface Science, 269, 2, 2013 |
| 8 |
Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution
Alperovich VL, Tereshchenko OE, Rudaya NS, Sheglov DV, Latyshev AV, Terekhov AS
Applied Surface Science, 235(3), 249, 2004 |
| 9 |
Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111)
Alperovich VL, Tereshchenko OE, Litvinov AN, Terekhov AS
Applied Surface Science, 175, 175, 2001 |
