화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R
Journal of Colloid and Interface Science, 583, 331, 2021
2 Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B
Journal of Crystal Growth, 499, 40, 2018
3 Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy
Soltani S, Bouzidi M, Chine Z, Toure A, Halidou I, El Jani B, Shakfa MK
Thin Solid Films, 630, 2, 2017
4 Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure
Yoon S, Bang J, Song Y, Oh J
Thin Solid Films, 590, 335, 2015
5 High-kappa insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Colon A, Shi JX
Solid-State Electronics, 99, 25, 2014
6 Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes
Akkaya A, Karaaslan T, Dede M, Cetin H, Ayyildiz E
Thin Solid Films, 564, 367, 2014
7 Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy
Shinoda H, Mutsukura N
Thin Solid Films, 516(10), 2837, 2008
8 Inversion domains in AlGaN films grown on patterned sapphire substrate
Kawamichi S, Nishino K, Sumiyoshi K, Tsukihara M, Yan FW, Sakai S
Journal of Crystal Growth, 298, 297, 2007
9 Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD
Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 298, 300, 2007
10 SIMS quantification of matrix and impurity species in AlxGa1-xN
Gu CJ, Stevie FA, Hitzman CJ, Saripalli YN, Johnson M, Griffis DP
Applied Surface Science, 252(19), 7228, 2006