1 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 583, 331, 2021 |
2 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B Journal of Crystal Growth, 499, 40, 2018 |
3 |
Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy Soltani S, Bouzidi M, Chine Z, Toure A, Halidou I, El Jani B, Shakfa MK Thin Solid Films, 630, 2, 2017 |
4 |
Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure Yoon S, Bang J, Song Y, Oh J Thin Solid Films, 590, 335, 2015 |
5 |
High-kappa insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors Colon A, Shi JX Solid-State Electronics, 99, 25, 2014 |
6 |
Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes Akkaya A, Karaaslan T, Dede M, Cetin H, Ayyildiz E Thin Solid Films, 564, 367, 2014 |
7 |
Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy Shinoda H, Mutsukura N Thin Solid Films, 516(10), 2837, 2008 |
8 |
Inversion domains in AlGaN films grown on patterned sapphire substrate Kawamichi S, Nishino K, Sumiyoshi K, Tsukihara M, Yan FW, Sakai S Journal of Crystal Growth, 298, 297, 2007 |
9 |
Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S Journal of Crystal Growth, 298, 300, 2007 |
10 |
SIMS quantification of matrix and impurity species in AlxGa1-xN Gu CJ, Stevie FA, Hitzman CJ, Saripalli YN, Johnson M, Griffis DP Applied Surface Science, 252(19), 7228, 2006 |