화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Impurity measurements in silicon with D-SIMS and atom probe tomography
Ronsheim P, Flaitz P, Hatzistergos M, Molella C, Thompson K, Alvis R
Applied Surface Science, 255(4), 1547, 2008
2 Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions
Kopanski JJ, Marchiando JF, Berning DW, Alvis R, Smith HE
Journal of Vacuum Science & Technology B, 16(1), 339, 1998
3 Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures
Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Lai TC, Chu SNG, Alvis R, Lareau RT, Wood MC
Journal of Vacuum Science & Technology B, 16(3), 1467, 1998
4 Physical Characterization of 2-Dimensional Doping Profiles for Process Modeling
Alvis R, Luning S, Thompson L, Sinclair R, Griffin P
Journal of Vacuum Science & Technology B, 14(1), 231, 1996
5 Junction Metrology by Cross-Sectional Atomic-Force Microscopy
Alvis R, Mantiply B, Young M
Journal of Vacuum Science & Technology B, 14(1), 452, 1996
6 Atomic-Force Microscopy for Cross-Section Inspection and Metrology
Wilder K, Quate CF, Singh B, Alvis R, Arnold WH
Journal of Vacuum Science & Technology B, 14(6), 4004, 1996