검색결과 : 6건
No. | Article |
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1 |
Impurity measurements in silicon with D-SIMS and atom probe tomography Ronsheim P, Flaitz P, Hatzistergos M, Molella C, Thompson K, Alvis R Applied Surface Science, 255(4), 1547, 2008 |
2 |
Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions Kopanski JJ, Marchiando JF, Berning DW, Alvis R, Smith HE Journal of Vacuum Science & Technology B, 16(1), 339, 1998 |
3 |
Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Lai TC, Chu SNG, Alvis R, Lareau RT, Wood MC Journal of Vacuum Science & Technology B, 16(3), 1467, 1998 |
4 |
Physical Characterization of 2-Dimensional Doping Profiles for Process Modeling Alvis R, Luning S, Thompson L, Sinclair R, Griffin P Journal of Vacuum Science & Technology B, 14(1), 231, 1996 |
5 |
Junction Metrology by Cross-Sectional Atomic-Force Microscopy Alvis R, Mantiply B, Young M Journal of Vacuum Science & Technology B, 14(1), 452, 1996 |
6 |
Atomic-Force Microscopy for Cross-Section Inspection and Metrology Wilder K, Quate CF, Singh B, Alvis R, Arnold WH Journal of Vacuum Science & Technology B, 14(6), 4004, 1996 |