화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE
Yurasov DV, Antonov AV, Drozdov MN, Yunin PA, Andreev BA, Bushuykin PA, Baydakova NA, Novikov AV
Journal of Crystal Growth, 491, 26, 2018
2 Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals
Andreev BA, Gavrilenko LV, Drozdov YN, Yunin PA, Pryakhin DA, Mochalov LA, Sennikov PG, Bulkin P, Roca i Cabarrocas P
Thin Solid Films, 552, 46, 2014
3 Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24 GHz) plasma from silicon tetrafluoride precursor
Mansfeld DA, Vodopyanov AV, Golubev SV, Sennikov PG, Mochalov LA, Andreev BA, Drozdov YN, Drozdov MN, Shashkin VI, Bulkine P, Cabarrocas PRI
Thin Solid Films, 562, 114, 2014
4 Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000)
Stepikhova MV, Andreev BA, Shmagin VB, Krasil'nik ZF, Kuznetsov VP, Shengurov VG, Svetlov SP, Jantsch W, Palmetshofer L, Ellmer H
Thin Solid Films, 381(1), 164, 2001
5 Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method
Stepikhova MV, Andreev BA, Shmagin VB, Krasil'nik ZF, Kuznetsov VP, Shengurov VG, Svetlov SP, Jantsch W, Palmetshofer L, Ellmer H
Thin Solid Films, 369(1-2), 426, 2000