검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility Antonova IV, Nebogatikova NA, Stepina NP, Volodin VA, Kirienko VV, Rybin MG, Obrazstova ED, Golyashov VA, Kokh KA, Tereshchenko OE Journal of Materials Science, 56(15), 9330, 2021 |
| 2 |
Optical and electronic properties of the partially fluorinated graphene suspensions and films Nebogatikova NA, Fedotov PV, Komonov AI, Vdovin VI, Antonova IV, Obraztsova ED Journal of Materials Science, 52(18), 10993, 2017 |
| 3 |
High carrier mobility in quasi-suspended few-layer graphene on printed graphene oxide layers Antonova IV, Basyleva EV, Kotin IA Journal of Materials Science, 52(17), 10230, 2017 |
| 4 |
Comparison of electrical properties of silicon-on-insulator structures fabricated with use of hydrogen slicing and BESOI Antonova IV, Nikolaev DV, Naumova OV, Popov VP Electrochemical and Solid State Letters, 7(3), F21, 2004 |
| 5 |
Characterization of silicon-on-insulator structures by high-resolution X-ray diffraction Antonova IV, Popov VP, Bak-Misiuk J, Domagala JZ Journal of the Electrochemical Society, 149(8), G490, 2002 |
| 6 |
Properties of silicon oversaturated with implanted hydrogen Popov VP, Tyschenko IE, Safronov LN, Naumova OV, Antonova IV, Gutakovsky AK, Talochkin AB Thin Solid Films, 403-404, 500, 2002 |
| 7 |
Effect of annealing at argon pressure up to 1.2 GPa hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon Misiuk A, Bak-Misiuk J, Barez A, Romano-Rodriguez A, Antonova IV, Popov VP, Londos CA, Jun J International Journal of Hydrogen Energy, 26(5), 483, 2001 |
| 8 |
Effect of stress on interface transformation in thin semiconducting layers Bak-Misiuk J, Domagala J, Misiuk A, Sadowski J, Zytkiewicz ZR, Trela J, Antonova IV Thin Solid Films, 380(1-2), 117, 2000 |
| 9 |
Thermal donor and oxygen precipitate formation in silicon during 450 degrees C treatments under atmospheric and enhanced pressure Antonova IV, Popov VP, Plotnikov AE, Misiuk A Journal of the Electrochemical Society, 146(4), 1575, 1999 |