검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
MBE-growth of CdTe on GaSb substrates: A case study on the influence of substrate quality Madni I, Lei W, Ren YL, Antoszewski J, Faraone L Materials Chemistry and Physics, 214, 285, 2018 |
| 2 |
MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors Gu R, Antoszewski J, Lei W, Madni I, Umana-Membrenao G, Faraone L Journal of Crystal Growth, 468, 216, 2017 |
| 3 |
High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs Umana-Membreno GA, Chang SJ, Bawedin M, Antoszewski J, Cristoloveanu S, Faraone L Solid-State Electronics, 113, 109, 2015 |
| 4 |
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique Antoszewski J, Dell JM, Faraone L, Bresson N, Cristoloveanu S Solid-State Electronics, 54(9), 1047, 2010 |
| 5 |
Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice Rao TVC, Antoszewski J, Rodriguez JB, Plis E, Krishna S, Faraone L Journal of Vacuum Science & Technology B, 26(3), 1081, 2008 |
| 6 |
Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion Rais MH, Musca CA, Antoszewski J, Dell JM, Nener BD, Faraone L Journal of Crystal Growth, 214, 1106, 2000 |