검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Atomic layer deposition of hafnium silicate gate dielectric films using Hf[N (CH3)(C2H5)](4) and SiH[N(CH3)(2)](3) precursors Kamiyama S, Miura T, Nara Y, Arikado T Electrochemical and Solid State Letters, 8(8), G215, 2005 |
| 2 |
Structural and electrical properties of nitrogen-incorporated MOCVD Hf-silicate gate dielectrics treated by plasma nitridation in an Ar/N-2 ambient Kamiyama S, Miura T, Nara Y, Arikado T Journal of the Electrochemical Society, 152(10), G750, 2005 |
| 3 |
50 nm gate electrode patterning using a neutral-beam etching system Noda S, Nishimori H, Ida T, Arikado T, Ichiki K, Ozaki T, Samukawa S Journal of Vacuum Science & Technology A, 22(4), 1506, 2004 |
| 4 |
Room temperature preparation of activated and crystallized p-type Si1-xGex thin film on glass substrate by intense, pulsed, ion beam evaporation Hirai M, Iwashita R, Arikado T, Suematsu H, Jiang W, Yatsui K, Takeda M, Uchitomi N Journal of Vacuum Science & Technology A, 22(6), 2398, 2004 |
| 5 |
Experimental study of the degradation of mechanical strength of silicon wafers caused by large scale integration processes Yagishita A, Fujii O, Numano M, Kawamura N, Iwase M, Ushiku Y, Arikado T Journal of the Electrochemical Society, 145(9), 3160, 1998 |
| 6 |
Leakage Current Mechanism of Amorphous and Polycrystalline Ta2O5 Films Grown by Chemical-Vapor-Deposition Aoyama T, Saida S, Okayama Y, Fujisaki M, Imai K, Arikado T Journal of the Electrochemical Society, 143(3), 977, 1996 |