검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE Arimoto K, Yagi S, Yamanaka J, Hara KO, Sawano K, Usami N, Nakagawa K Journal of Crystal Growth, 468, 625, 2017 |
| 2 |
Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation Kato M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K Journal of Crystal Growth, 477, 197, 2017 |
| 3 |
Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source Hara KO, Trinh CT, Kurokawa Y, Arimoto K, Yamanaka J, Nakagawa K, Usami N Thin Solid Films, 636, 546, 2017 |
| 4 |
Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Hara KO, Du WJ, Arimoto K, Yamanaka J, Nakagawa K, Toko K, Suemasu T, Usami N Thin Solid Films, 603, 218, 2016 |
| 5 |
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator Sawano K, Hoshi Y, Kubo S, Arimoto K, Yamanaka J, Nakagawa K, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 613, 24, 2016 |
| 6 |
Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation Hara KO, Yamanaka J, Arimoto K, Nakagawa K, Suemasu T, Usami N Thin Solid Films, 595, 68, 2015 |
| 7 |
Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer Sawano K, Hoshi Y, Endo S, Nagashima T, Arimoto K, Yamanaka J, Nakagawa K, Yamada S, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 557, 76, 2014 |
| 8 |
Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy Arimoto K, Furukawa H, Yamanaka J, Yamamoto C, Nakagawa K, Usami N, Sawano K, Shiraki Y Journal of Crystal Growth, 362, 276, 2013 |
| 9 |
Formation of compressively strained SiGe/Si(110) heterostructures and their characterization Arimoto K, Obata T, Furukawa H, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y Journal of Crystal Growth, 362, 282, 2013 |
| 10 |
Electroluminescence of GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source Ohta N, Arimoto K, Shiraga M, Ishii K, Inada M, Yanai S, Nakai Y, Akiyama H, Mochizuki T, Takahashi T, Takahashi N, Miyagawa H, Tsurumachi N, Nakanishi S, Koshiba S Journal of Crystal Growth, 378, 150, 2013 |