검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As-2 and As-4 arsenic sources Kawaharazuka A, Yoshiba I, Horikoshi Y Applied Surface Science, 255(3), 737, 2008 |
| 2 |
저온 분자선 에피택시법을 이용한 GaMnAs 자성반도체 성장 및 특성 연구 박진범, 고동완, 박용주, 오형택, 신춘교, 김영미, 박일우, 변동진, 이정일 Korean Journal of Materials Research, 14(4), 235, 2004 |
| 3 |
Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As-2 and As-4 molecular beams Ogura T, Nishinaga T Journal of Crystal Growth, 211(1-4), 416, 2000 |
| 4 |
Density-Functional Study of Phosphorus and Arsenic Clusters Using Local and Nonlocal Energy Functionals Ballone P, Jones RO Journal of Chemical Physics, 100(7), 4941, 1994 |