검색결과 : 44건
| No. | Article |
|---|---|
| 1 |
Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloy system Kim KM, Kim WB, Krishnamurthy D, Ryu JH, Hasegawa S, Asahi H Journal of Crystal Growth, 368, 35, 2013 |
| 2 |
Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy Hasegawa S, Shimoi T, Asahi H Journal of Crystal Growth, 378, 47, 2013 |
| 3 |
Growth and characterization of GaDyN/GaN double barrier structures Sano M, Zhou YK, Emura S, Hasegawa S, Asahi H Journal of Crystal Growth, 378, 137, 2013 |
| 4 |
Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE Higashi K, Hasegawa S, Sano S, Zhou YK, Asahi H Journal of Crystal Growth, 378, 310, 2013 |
| 5 |
Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) Sano S, Hasegawa S, Mitsuno Y, Higashi K, Ishimaru M, Sakurai T, Ohta H, Asahi H Journal of Crystal Growth, 378, 314, 2013 |
| 6 |
Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy Tambo H, Asahi H Journal of Crystal Growth, 383, 57, 2013 |
| 7 |
Surface morphology and crystalline structure of high-stable polycrystalline transparent conductive zinc oxide films Kuchiyama T, Yamamoto K, Hasegawa S, Asahi H Applied Surface Science, 258(4), 1488, 2011 |
| 8 |
Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods Tambo H, Hasegawa S, Kameoka H, Zhou YK, Emura S, Asahi H Journal of Crystal Growth, 323(1), 323, 2011 |
| 9 |
Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy Tawil SNM, Krishnamurthy D, Kakimi R, Emura S, Hasegawa S, Asahi H Journal of Crystal Growth, 323(1), 351, 2011 |
| 10 |
Deepwater Formation in the North Pacific During the Last Glacial Termination Okazaki Y, Timmermann A, Menviel L, Harada N, Abe-Ouchi A, Chikamoto MO, Mouchet A, Asahi H Science, 329(5988), 200, 2010 |