화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Nitride based heterostructures with Ga- and N-polarity for sensing applications
Fandrich M, Mehrtens T, Aschenbrenner T, Klein T, Gebbe M, Figge S, Kruse C, Rosenauer A, Hommel D
Journal of Crystal Growth, 370, 68, 2013
2 Growth of AlN by pulsed and conventional MOVPE
Kroncke H, Figge S, Aschenbrenner T, Hommel D
Journal of Crystal Growth, 381, 100, 2013
3 Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity
Dartsch H, Tessarek C, Aschenbrenner T, Figge S, Kruse C, Schowalter M, Rosenauer A, Hommel D
Journal of Crystal Growth, 320(1), 28, 2011
4 Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE
Dartsch H, Figge S, Aschenbrenner T, Pretorius A, Rosenauer A, Hommel D
Journal of Crystal Growth, 310(23), 4923, 2008
5 Photoluminescence and structural analysis of a-plane InGaN layers
Aschenbrenner T, Figge S, Schowalter M, Rosenauer A, Hommel D
Journal of Crystal Growth, 310(23), 4992, 2008
6 Novel point mutations in the mitochondrial DNA detected in patients with dilated cardiomyopathy by screening the whole mitochondrial genome
Ruppert V, Nolte D, Aschenbrenner T, Pankuweit S, Funck R, Maisch B
Biochemical and Biophysical Research Communications, 318(2), 535, 2004