검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Analytical and numerical model of spiral inductors on high resistivity silicon substrates Mallik K, Abuelgasim A, Hashim N, Ashburn P, de Groot CH Solid-State Electronics, 93, 43, 2014 |
| 2 |
Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization Sun K, Hakim MMA, Ashburn P Electrochemical and Solid State Letters, 15(3), H62, 2012 |
| 3 |
Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors Uchino T, Ayre G, Smith DC, Hutchison JL, de Groot CH, Ashburn P Electrochemical and Solid State Letters, 14(4), K21, 2011 |
| 4 |
Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation Uchino T, Ayre GN, Smith DC, Hutchison JL, de Groot CH, Ashburn P Journal of the Electrochemical Society, 156(8), K144, 2009 |
| 5 |
PAPERS SELECTED FROM THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE - ESSDERC'08 Foreword Ashburn P, Hall S Solid-State Electronics, 53(7), 675, 2009 |
| 6 |
Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation Hakim MMA, Tan L, Buiu O, Redman-White W, Hall S, Ashburn P Solid-State Electronics, 53(7), 753, 2009 |
| 7 |
The influence of junction depth on short channel effects in vertical sidewall MOSFETs Tan L, Buiu O, Hall S, Gill E, Uchino T, Ashburn P Solid-State Electronics, 52(7), 1002, 2008 |
| 8 |
Mechanism of germanium-induced perimeter crystallization of amorphous silicon Hakim MMA, Ashburn P Journal of the Electrochemical Society, 154(4), H275, 2007 |
| 9 |
Increased lateral crystallization width during nickel induced lateral crystallization of amorphous silicon using fluorine implantation Hakim MMA, Ashburn P Journal of the Electrochemical Society, 154(8), H734, 2007 |
| 10 |
Perimeter crystallization of amorphous silicon around a germanium seed Hakim MMA, Matko I, Chenevier B, Ashburn P Electrochemical and Solid State Letters, 9(7), G236, 2006 |