검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Essa Z, Pelletier B, Morin P, Boulenc P, Pakfar A, Tavernier C, Wacquant F, Zechner C, Juhel M, Autran JL, Cristiano F Solid-State Electronics, 126, 163, 2016 |
| 2 |
Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors Barral V, Poiroux T, Vinet M, Widiez J, Previtali B, Grosgeorges P, Le Carval G, Barraud S, Autran JL, Munteanu D, Deleonibus S Solid-State Electronics, 51(4), 537, 2007 |
| 3 |
Quantum short-channel compact modelling of drain-current in double-gate MOSFET Munteanu D, Autran JL, Loussier X, Harrison S, Cerutti R, Skotnicki T Solid-State Electronics, 50(4), 680, 2006 |
| 4 |
Influence of band structure on electron ballistic transport in silicon nanowire MOSFET's: An atomistic study Nehari K, Cavassilas N, Autran JL, Bescond M, Munteanu D, Lannoo M Solid-State Electronics, 50(4), 716, 2006 |
| 5 |
Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism Bescond M, Autran JL, Munteanu D, Lannoo M Solid-State Electronics, 48(4), 567, 2004 |
| 6 |
Model for defect generation at the (100)Si/SiO2 interface during electron injection in MOS structures Houssa M, Autran JL, Heyns MM, Stesmans A Applied Surface Science, 212, 749, 2003 |
| 7 |
Tunneling component of the ballistic current in ultimate double-gate devices Autran JL, Munteanu D Electrochemical and Solid State Letters, 6(7), G95, 2003 |
| 8 |
Impact of nitrogen on negative bias temperature instability in p-channel MOSFETs Houssa M, Parthasarathy C, Espreux N, Autran JL, Revil N Electrochemical and Solid State Letters, 6(12), G146, 2003 |
| 9 |
Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices Munteanu D, Autran JL Solid-State Electronics, 47(7), 1219, 2003 |
| 10 |
An efficient model for accurate capacitance-voltage characterization of high-k gate dielectrics using a mercury probe Garros X, Leroux C, Autran JL Electrochemical and Solid State Letters, 5(3), F4, 2002 |