| 1 |
The use of high density plasma system to improve the etch properties of the zinc tin oxide thin film for transparent thin film transistors active layers
Woo JC, Chun YS, Kim CI
Applied Surface Science, 292, 915, 2014 |
| 2 |
Copolymerization of ethylene/1-hexene with zirconocene/MAO catalyst supported on spherical zirconia modified with BCl3, SiCl4, and glycerol
Jantasee S, Shiono T, Jongsomjit B
Polymer Bulletin, 70(6), 1753, 2013 |
| 3 |
Bc13-dependent stabilization of CtBP1 is crucial for the inhibition of apoptosis and tumor progression in breast cancer
Choi HJ, Lee JM, Kim H, Nam HJ, Shin HJR, Kim D, Ko E, Noh DY, Kim KI, Kim JH, Baek SH
Biochemical and Biophysical Research Communications, 400(3), 396, 2010 |
| 4 |
Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N-2 plasmas
Kim JK, Lee JH, Joo YW, Park YH, Noh HS, Lee JW, Pearton SJ
Current Applied Physics, 10(2), 416, 2010 |
| 5 |
The etching characteristics of Al2O3 thin films in an inductively coupled plasma
Xue-Yang, Um DS, Kim CI
Thin Solid Films, 518(22), 6441, 2010 |
| 6 |
Dry etching process of GaAs in capacitively coupled BCl3-based plasmas
Lee JW, Noh HS, Lee SH, Park JH, Choi KH, Pearton SJ
Thin Solid Films, 518(22), 6488, 2010 |
| 7 |
저진공 축전 결합형 BCl3/N2 플라즈마를 이용한 GaAs의 건식 식각
김재권, 박주홍, 이성현, 노호섭, 주영우, 박연현, 김태진, 이제원
Korean Journal of Materials Research, 19(3), 132, 2009 |
| 8 |
Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system
Yokogawa T, Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H
Applied Surface Science, 254(19), 6090, 2008 |
| 9 |
Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory
Min SR, Cho HN, Kim KW, Cho YJ, Choa SH, Chung CW
Thin Solid Films, 516(11), 3507, 2008 |
| 10 |
Effect of additive gases on the selective etching of ZrOx film using inductively coupled BCl3-based plasmas
Park SD, Lim JH, Yeom GY
Thin Solid Films, 515(12), 5045, 2007 |
