| 1 |
Thermal redistribution of hydrogen and boron in SiO2 in SiN-capped p-type MOSFET structures
Kawashima Y, Aoyagi S, Kudo M
Applied Surface Science, 244(1-4), 43, 2005 |
| 2 |
Theoretical study on stable structures and diffusion mechanisms of B in SiO2
Otani M, Shiraishi K, Oshiyama A
Applied Surface Science, 216(1-4), 490, 2003 |
| 3 |
Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices
Patil SB, Vairagar AV, Kumbhar AA, Sahu LK, Rao VR, Venkatramani N, Dusane RO, Schroeder B
Thin Solid Films, 430(1-2), 63, 2003 |
| 4 |
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode
Herden M, Bauer AJ, Beichele M, Ryssel H
Solid-State Electronics, 45(8), 1251, 2001 |
| 5 |
Pregate oxidation treatment using radio frequency activated nitrogen in a rapid thermal reactor
Wong M, Ho WH, Yeung M, Chin G, Chan PCH, Zohar Y
Journal of the Electrochemical Society, 146(2), 707, 1999 |
| 6 |
Modeling and optimization of oxynitride gate dielectrics formation by remote plasma nitridation of silicon dioxide
Kapila D, Hattangady S, Douglas M, Kraft R, Gribelyuk M
Journal of the Electrochemical Society, 146(3), 1111, 1999 |
| 7 |
Reliability of Nitrided Si-SiO2 Interfaces Formed by a New, Low-Temperature, Remote-Plasma Process
Lee DR, Parker CG, Hauser J, Lucovsky G
Journal of Vacuum Science & Technology B, 13(4), 1788, 1995 |
| 8 |
Deposition of Single-Phase, Homogeneous Silicon Oxynitride by Remote Plasma-Enhanced Chemical-Vapor-Deposition, and Electrical Evaluation in Metal-Insulator-Semiconductor Devices
Ma Y, Lucovsky G
Journal of Vacuum Science & Technology B, 12(4), 2504, 1994 |
| 9 |
Electrical-Properties of the P(+)-Gate Electrode of an A-Si/Poly-Si Double-Layer
Kim SO, Kim KJ, Kim HS, Kang SB, Sone JH, Byun JS, Kim HJ
Thin Solid Films, 253(1-2), 413, 1994 |
