검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates Guan YX, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF Journal of Crystal Growth, 464, 39, 2017 |
| 2 |
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice Chen WX, Ronsheim PA, Wood AW, Forghani K, Guan YX, Kuech TF, Babcock SE Journal of Crystal Growth, 446, 27, 2016 |
| 3 |
Regrowth of quantum cascade laser active regions on metamorphic buffer layers Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li XQ, Sigler C, Babcock SE, Earles T Journal of Crystal Growth, 452, 268, 2016 |
| 4 |
Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ Journal of Crystal Growth, 452, 276, 2016 |
| 5 |
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Forghani K, Guan YX, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF Journal of Crystal Growth, 395, 38, 2014 |
| 6 |
The effect of helium ion implantation on the relaxation of strained InGaAs thin films Paulson CA, Jha S, Song X, Rathi M, Babcock SE, Mawst L, Kuech TF Thin Solid Films, 520(6), 2147, 2012 |
| 7 |
Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography Jha S, Wiedmann MK, Kuan TS, Song XY, Babcock SE, Kuech TF Journal of Crystal Growth, 315(1), 91, 2011 |
| 8 |
InAS(y)P(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS Journal of Crystal Growth, 312(8), 1165, 2010 |
| 9 |
Editors' preface to the ICCG-15 conference and the 13th OMVPE workshop proceedings Kuech TF, Babcock SE Journal of Crystal Growth, 310(7-9), 2307, 2008 |
| 10 |
Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ Journal of Crystal Growth, 310(7-9), 2377, 2008 |