검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Demonstration of a 9 kV reverse breakdown and 59 m Omega-cm(2) specific on-resistance AlGaN/GaN Schottky barrier diode Colon A, Douglas EA, Pope AJ, Klein BA, Stephenson CA, Van Heukelom MS, Tauke-Pedretti A, Baca AG Solid-State Electronics, 151, 47, 2019 |
| 2 |
Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design DasGupta S, Baca AG, Cich MJ Solid-State Electronics, 91, 59, 2014 |
| 3 |
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Voss LF, Ip K, Peartona SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA Journal of Vacuum Science & Technology B, 26(2), 487, 2008 |
| 4 |
Thermal stability of WSiX Schottky contacts on n-type 4H-SiC Kim J, Ren F, Baca AG, Chung GY, Pearton SJ Solid-State Electronics, 48(1), 175, 2004 |
| 5 |
Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R Electrochemical and Solid State Letters, 6(3), G31, 2003 |
| 6 |
Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ Solid-State Electronics, 47(6), 1015, 2003 |
| 7 |
High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC Kim J, Ren F, Baca AG, Briggs RD, Pearton SJ Solid-State Electronics, 47(8), 1345, 2003 |
| 8 |
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 Luo B, Johnson JW, Gila BP, Onstine A, Abernathy CR, Ren F, Pearton SJ, Baca AG, Dabiran AM, Wowchack AM, Chow PP Solid-State Electronics, 46(4), 467, 2002 |
| 9 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ Solid-State Electronics, 46(4), 513, 2002 |
| 10 |
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Chang PC, Monier C, Baca AG, Li NY, Newman F, Armour E, Hou HQ Solid-State Electronics, 46(4), 581, 2002 |