검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
TFET inverter static and transient performances in presence of traps and localized strain Gnani E, Visciarelli M, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 159, 38, 2019 |
| 2 |
Design guidelines for GaSb/InAs TFET exploiting strain and device size Visciarelli M, Gnani E, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 129, 157, 2017 |
| 3 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
| 4 |
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures Cornigli D, Monti F, Reggiani S, Gnani E, Gnudi A, Baccarani G Solid-State Electronics, 115, 173, 2016 |
| 5 |
Theoretical analysis and modeling for nanoelectronics Baccarani G, Gnani E, Gnudi A, Reggiani S Solid-State Electronics, 125, 2, 2016 |
| 6 |
Capacitance estimation for In As Tunnel FETs by means of full-quantum k . p simulation Gnani E, Baravelli E, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 108, 104, 2015 |
| 7 |
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs Villani F, Gnani E, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 113, 86, 2015 |
| 8 |
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics Di Lecce V, Grassi R, Gnudi A, Gnani E, Reggiani S, Baccarani G Solid-State Electronics, 114, 23, 2015 |
| 9 |
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model Maiorano P, Gnani E, Grassi R, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 98, 45, 2014 |
| 10 |
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback Grassi R, Gnudi A, Di Lecce V, Gnani E, Reggiani S, Baccarani G Solid-State Electronics, 100, 54, 2014 |