검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE) Cardelino BH, Moore CE, Cardelino CA, McCall SD, Frazier DO, Bachmann KJ Journal of Physical Chemistry A, 107(19), 3708, 2003 |
| 2 |
Theoretical study of indium compounds of interest for organometallic chemical vapor deposition Cardelino BH, Moore CE, Cardelino CA, Frazier DO, Bachmann KJ Journal of Physical Chemistry A, 105(5), 849, 2001 |
| 3 |
Initial stages of heteroepitaxy of GaP on selected silicon surfaces Sukidi N, Bachmann KJ, Narayanan V, Mahajan S Journal of the Electrochemical Society, 146(3), 1147, 1999 |
| 4 |
Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) Narayanan V, Sukidi N, Bachmann KJ, Mahajan S Thin Solid Films, 357(1), 53, 1999 |
| 5 |
Real-Time Monitoring of Surface Processes by P-Polarized Reflectance Dietz N, Sukidi N, Harris C, Bachmann KJ Journal of Vacuum Science & Technology A, 15(3), 807, 1997 |
| 6 |
Heteroepitaxy of Gap on Si(100) Bachmann KJ, Rossow U, Sukidi N, Castleberry H, Dietz N Journal of Vacuum Science & Technology B, 14(4), 3019, 1996 |
| 7 |
Optical Investigations of Surface Processes in Gap Heteroepitaxy on Silicon Under Pulsed Chemical Beam Epitaxy Conditions Rossow U, Dietz N, Bachmann KJ, Aspnes DE Journal of Vacuum Science & Technology B, 14(4), 3040, 1996 |
| 8 |
Real-Time Monitoring of Homoepitaxial and Heteroepitaxial Processes by P-Polarized Reflectance Spectroscopy Dietz N, Miller A, Bachmann KJ Journal of Vacuum Science & Technology A, 13(1), 153, 1995 |
| 9 |
Heteroepitaxy of Lattice-Matched Compound Semiconductors on Silicon Bachmann KJ, Dietz N, Miller AE, Venables D, Kelliher JT Journal of Vacuum Science & Technology A, 13(3), 696, 1995 |
| 10 |
Heteroepitaxial Growth of Si on Gap and GaAs-Surfaces by Remote, Plasma-Enhanced Chemical-Vapor-Deposition Habermehl S, Dietz N, Lu Z, Bachmann KJ, Lucovsky G Journal of Vacuum Science & Technology A, 12(4), 990, 1994 |