검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 mu m grown by MOVPE Ostinelli O, Haiml M, Grange R, Almuneau G, Ebnother M, Gini E, Muller E, Keller U, Bachtold W Journal of Crystal Growth, 286(2), 247, 2006 |
| 2 |
Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors Robin F, Orzati A, Homan OJ, Bachtold W Journal of Vacuum Science & Technology B, 18(6), 3445, 2000 |
| 3 |
Atomic-Force Microscopy Investigations of Dry-Etched Gate Recesses for InGaAs/InAlAs-Based High-Electron-Mobility Transistors Using Methane-Hydrogen Reactive Ion Etching Duran HC, Patrick W, Bachtold W Journal of Vacuum Science & Technology B, 13(6), 2386, 1995 |