검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Peculiarities of strain relaxation in linearly graded InxGa1-xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy Sorokin SV, Klimko GV, Sedova IV, Sitnikova AA, Kirilenko DA, Baidakova MV, Yagovkina MA, Komissarova TA, Belyaev KG, Ivanov SV Journal of Crystal Growth, 455, 83, 2016 |
| 2 |
Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions Georgakilas A, Amimer K, Tzanetakis P, Hatzopoulos Z, Cengher M, Pecz B, Czigany Z, Toth L, Baidakova MV, Sakharov AV, Davydov VY Journal of Crystal Growth, 227, 410, 2001 |
| 3 |
Single phase ZnSnAs2 grown by molecular beam epitaxy Seryogin GA, Nikishin SA, Temkin H, Schlaf R, Sharp LI, Wen YC, Parkinson B, Elyukhin VA, Kudriavtsev YA, Mintairov AM, Faleev NN, Baidakova MV Journal of Vacuum Science & Technology B, 16(3), 1456, 1998 |