검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100) Barrett CSC, Lind AG, Bao X, Ye Z, Ban KY, Martin P, Sanchez E, Xin Y, Jones KS Journal of Materials Science, 51(1), 449, 2016 |
| 2 |
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB Journal of Crystal Growth, 406, 68, 2014 |
| 3 |
Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer Hong HG, Hong WK, Ban KY, Lee T, Seong TY, Song JO, Ferguson IT, Kwak JS Electrochemical and Solid State Letters, 8(10), G280, 2005 |
| 4 |
Highly reflective and low resistance indium tin oxide/Ag ohmic contacts to p-type GaN for flip-chip light emitting diodes Hong WK, Song JO, Hong HG, Ban KY, Lee T, Kwak JS, Park Y, Seong TY Electrochemical and Solid State Letters, 8(11), G320, 2005 |