검색결과 : 42건
| No. | Article |
|---|---|
| 1 |
Highly frequency-, temperature-, and bias -stable dielectric properties of 500 degrees C processed Bi2SiO5 thin films with low dielectric loss Ke YF, Huang WH, Thatikonda SK, Chen RQ, Yao CY, Qin N, Bao DH Current Applied Physics, 20(6), 751, 2020 |
| 2 |
Bipolar resistive switching effect and mechanism of solution-processed orthorhombic Bi2SiO5 thin films Chen RQ, Hu W, Zou LL, Ke YF, Hao AZ, Bao DH Current Applied Physics, 19(9), 987, 2019 |
| 3 |
Coexistence of resistive switching and magnetism modulation in sol-gel derived nanocrystalline spinel Co3O4 thin films Yao C, Hu W, Ismail M, Thatikonda SK, Hao AZ, He S, Qin N, Huang WH, Bao DH Current Applied Physics, 19(11), 1286, 2019 |
| 4 |
Electrochemically Driven, Ni-Catalyzed Aryl Amination: Scope, Mechanism, and Applications Kawamata Y, Vantourout JC, Hickey DP, Bai P, Chen LR, Hou QL, Qiao WH, Barman K, Edwards MA, Garrido-Castro AF, Degruyter JN, Nakamura H, Knouse K, Qin CG, Clay KJ, Bao DH, Li C, Starr JT, Garcia-Irizarry C, Sach N, White HS, Neurock M, Minteer SD, Baran PS Journal of the American Chemical Society, 141(15), 6392, 2019 |
| 5 |
Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory Ismail M, Jabeen S, Akber T, Talib I, Hussain F, Rana AM, Hussain M, Mahmood K, Ahmed E, Bao DH Current Applied Physics, 18(8), 924, 2018 |
| 6 |
Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory Ismail M, Jabeen S, Akber T, Talib I, Hussain F, Rana AM, Hussain M, Mahmood K, Ahmed E, Bao DH Current Applied Physics, 18(8), 924, 2018 |
| 7 |
Microstructural, ferroelectric, and photoluminescent properties of (100)-oriented Sm3+-doped Na0.5Bi0.5TiO3 thin films Huang WH, Du XR, Ismail M, Hao AZ, Wu J, He S, Qin N, Bao DH Journal of the American Ceramic Society, 101(10), 4645, 2018 |
| 8 |
Modular radical cross-coupling with sulfones enables access to sp(3)-rich (fluoro)alkylated scaffolds Merchant RR, Edwards JT, Qin T, Kruszyk MM, Bi C, Che GD, Bao DH, Qiao WH, Sun LJ, Collins MR, Fadeyi OO, Gallego GM, Mousseau JJ, Nuhant P, Baran PS Science, 360(6384), 75, 2018 |
| 9 |
Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices Ismail M, Rana AM, Nisa SU, Hussain F, Imran M, Mahmood K, Talib I, Ahmed E, Bao DH Current Applied Physics, 17(10), 1303, 2017 |
| 10 |
Scalable, Electrochemical Oxidation of Unactivated C-H Bonds Kawamata Y, Yan M, Liu ZQ, Bao DH, Chen JS, Starr JT, Baran PS Journal of the American Chemical Society, 139(22), 7448, 2017 |