검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing Abi-Tannous T, Soueidan M, Ferro G, Lazar M, Toury B, Beaufort MF, Barbot JF, Penuelas J, Planson D Applied Surface Science, 347, 186, 2015 |
| 2 |
Three-layer structure of hydrogenated Czochralski silicon Ma Y, Job R, Huang YL, Fahrner WR, Beaufort MF, Barbot JF Journal of the Electrochemical Society, 151(9), G627, 2004 |
| 3 |
Contribution of X-Ray Diffraction simulations to experimental study of high energy He implantation at high dose in 4H-SiC at room temperature Declemy A, Shiryaev A, Stepanov S, Barbot JF, Beaufort MF, Oliviero E, Ntsoenzok E, Sauvage T Materials Science Forum, 457-460, 937, 2004 |
| 4 |
Evidence for two charge states of the S-center in ion-implanted 4H-SiC David ML, Alfieri G, Monakhov EV, Hallen A, Barbot JF, Svensson BG Materials Science Forum, 433-4, 371, 2002 |
| 5 |
Relaxation-Time for Ionized Impurity Scattering in Compensated N-Type Hg1-xCdxTe Near X=0.2 Girault P, Blanchard C, Grosbras P, Barbot JF Journal of Materials Science, 32(14), 3857, 1997 |
| 6 |
Observation of Deep Levels Associated with Dislocations in N-Type Hg0.3Cd0.7Te Barbot JF, Girault P, Blanchard C, Hummelgen IA Journal of Materials Science, 30(13), 3471, 1995 |
| 7 |
Electrical Property of N-Hg0.8Cd0.2Te Plastically Deformed Girault P, Barbot JF, Blanchard C Journal of Materials Science Letters, 14(6), 449, 1995 |