검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing Barrett CSC, Atassi A, Kennon EL, Weinrich Z, Haynes K, Bao X-Y, Martin P, Jones KS Journal of Materials Science, 54(9), 7028, 2019 |
| 2 |
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001) Barrett CSC, Martina TP, Bao XY, Kennon EL, Gutierrez L, Martin P, Sanchez E, Jones KS Journal of Crystal Growth, 450, 39, 2016 |
| 3 |
Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100) Barrett CSC, Lind AG, Bao X, Ye Z, Ban KY, Martin P, Sanchez E, Xin Y, Jones KS Journal of Materials Science, 51(1), 449, 2016 |