검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
On-chip grown ZnO nanosheet-array with interconnected nanojunction interfaces for enhanced optoelectronic NO2 gas sensing at room temperature Wang J, Yu MY, Xia Y, Li X, Yang C, Komarneni S Journal of Colloid and Interface Science, 554, 19, 2019 |
| 2 |
Barrier heights of Au, Pt, Pd, Ir, Cu on nitrogen terminated (100) diamond determined by X-ray photoelectron spectroscopy Li FN, Li Y, Fan DY, Wang HX Applied Surface Science, 456, 532, 2018 |
| 3 |
Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy Li FN, Liu JW, Zhang JW, Wang XL, Wang W, Liu ZC, Wang HX Applied Surface Science, 370, 496, 2016 |
| 4 |
Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts Chen J, Lv JB, Wang QS Thin Solid Films, 616, 145, 2016 |
| 5 |
Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics Toyoshima Y, Horiba K, Oshima M, Ohta J, Fujioka H, Miki H, Ueda S, Yamashita Y, Yoshikawa H, Kobayashi K Applied Surface Science, 255(5), 2149, 2008 |
| 6 |
Effect of thermal treatment for Pd and PdSi Schottky contacts on p-GaN Tan CK, Aziz AA, Yam FK, Lim CW, Hassan Z, Hudeish AY Materials Science Forum, 517, 242, 2006 |
| 7 |
The study of thermal treatment on electrical properties at Cr/p-GaN Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY Materials Science Forum, 517, 247, 2006 |
| 8 |
Pinning fermi level of p-GaN due to three different (Zr, Ti, and Cr) metal contact Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY Materials Science Forum, 517, 262, 2006 |
| 9 |
The electronic characteristics of IrSi thin films Ma XY Materials Science Forum, 475-479, 3363, 2005 |
| 10 |
Barrier heights of organic modified Schottky contacts: theory and experiment Kampen T, Bekkali A, Thurzo I, Zahn DRT, Bolognesi A, Ziller T, Di Carlo A, Lugli P Applied Surface Science, 234(1-4), 313, 2004 |