검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marin N, David JPR, Gonzalez D Applied Surface Science, 485, 29, 2019 |
| 2 |
Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length Kupers H, Bastiman F, Luna E, Somaschini C, Geelhaar L Journal of Crystal Growth, 459, 43, 2017 |
| 3 |
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D, David JPR Journal of Crystal Growth, 425, 237, 2015 |
| 4 |
Molecular beam epitaxy growth of GaAsBi using As-2 and As-4 Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS, David JPR Journal of Crystal Growth, 390, 120, 2014 |
| 5 |
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth Bastiman F, Mohmad ARB, Ng JS, David JPR, Sweeney SJ Journal of Crystal Growth, 338(1), 57, 2012 |
| 6 |
Bi incorporation in GaAs(100)-2 x 1 and 4 x 3 reconstructions investigated by RHEED and STM Bastiman F, Cullis AG, David JPR, Sweeney SJ Journal of Crystal Growth, 341(1), 19, 2012 |
| 7 |
GaAs(001) planarization after conventional oxide removal utilising self-governed InAs QD site selection Bastiman F, Cullis AG Applied Surface Science, 256(13), 4269, 2010 |
| 8 |
Ga assisted oxide desorption on GaAs(001) studied by scanning tunnelling microscopy Bastiman F, Lin JC, Cullis AG, Hogg R, Skolnick M Journal of Crystal Growth, 312(10), 1687, 2010 |
| 9 |
Two step optimized process for scanning tunneling microscopy tip fabrication Bastiman F, Cullis AG, Hopkinson M, Briston KJ Journal of Vacuum Science & Technology B, 28(2), 371, 2010 |
| 10 |
As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy Bastiman F, Cullis AG, Hopkinson M Journal of Crystal Growth, 311(20), 4478, 2009 |