화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Microscopic mechanisms of Si(111) surface nitridation and energetics of Si3N4/Si(111) interface
Petrenko TL, Bryksa VP, Dyka IV, Kladko VP, Belyaev AE, Kuchuk AV
Applied Surface Science, 483, 302, 2019
2 Modelling of X-ray diffraction curves for GaN nanowires on Si(111)
Kladko VP, Kuchuk AV, Stanchu HV, Safriuk NV, Belyaev AE, Wierzbicka A, Sobanska M, Klosek K, Zytkiewicz ZR
Journal of Crystal Growth, 401, 347, 2014
3 Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation
Vitusevich SA, Kurakin AM, Konakova RV, Belyaev AE, Klein N
Applied Surface Science, 255(3), 784, 2008
4 Aluminium nitride-niobium multilayers and free-standing structures for MEMS
Danylyuk SV, Ott R, Panaitov G, Pickartz G, Hollmann E, Vitusevich SA, Belyaev AE, Klein N
Thin Solid Films, 515(2), 489, 2006
5 High temperature contacts to GaN and SiC based on TiBx nanostructure layers
Boltovets MS, Ivanov VN, Avksentyev AY, Belyaev AE, Borisenko AG, Fedorovitsh OA, Konakova RV, Kudryk YY, Lytvyn PM, Milenin VV, Sachenko AV, Sveschnikov YN
Materials Science Forum, 483, 1061, 2005
6 Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures
Vitusevich SA, Danylyuk SV, Petrychuk MV, Antoniuk OA, Klein N, Belyaev AE
Applied Surface Science, 238(1-4), 143, 2004
7 Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal-semiconductor transition
Tarasov GG, Mazur YI, Kuz'menko EV, Belyaev AE, Hoerstel W, Kraak W, Masselink WT
Journal of Crystal Growth, 214, 436, 2000